Mukti Ali, Fitrani Kadir, Muh. Syihab Ikbal

ANALISIS KARAKTERISTIK PANJAR MAJU DAN PANJAR MUNDUR PADA DIODA 1N4007

Introduction

Analisis karakteristik panjar maju dan panjar mundur pada dioda 1n4007. Analisis karakteristik dioda 1N4007 pada panjar maju dan mundur. Pelajari perubahan arus-tegangan secara eksperimen, memahami sifat silikon, tegangan kerja, dan breakdown.

Abstract

The purpose of this study is to describe the characteristics of changes in current and voltage in rectifier diodes with the 1N4007 series in the forward bias and reverse bias states and to be able to describe and explain the characteristics of the current-voltage (I-V) and 1N4007 rectifier diodes. The method used in this study is the experimental method. The equipment and components used in the research are 1N4007 diode, B10K potentiometer, 100? resistor, ammeter and voltmeter. The variables measured in this study are the control variable (voltage source), the measurement variable (diode voltage), the response variable (diode current strength). The relationship that is formed from the current strength and voltage on the diode is in the form of a linear curve at the voltage value below the diode working voltage, and will increase significantly when the diode voltage is at working voltage. Based on the analysis of the graph and the load line, it can be concluded that the 1N4007 diode is a diode derived from silicon material with a working voltage value of 0.6 -0.7volts and will only pass current in one direction and will not pass current in a bias state. backwards as long as the diode has not reached its breakdown voltage.

Review

This study presents an experimental investigation into the fundamental characteristics of the 1N4007 rectifier diode under both forward and reverse bias conditions. The stated objectives are clear: to describe the changes in current and voltage and to detail the current-voltage (I-V) characteristics of this specific diode series. Utilizing a straightforward experimental method with common electronic components, the research aims to provide an empirical understanding of a widely used semiconductor device, which is a foundational aspect of electronics. Methodologically, the study defines its approach and variables clearly, specifying the control (voltage source), measurement (diode voltage), and response (diode current) variables. The chosen equipment (1N4007 diode, potentiometer, resistor, ammeter, voltmeter) is appropriate for the intended measurements. The findings, which include the observation of a linear current increase below the working voltage, a significant increase at the working voltage (0.6-0.7V), and the diode's unidirectional current flow until reverse breakdown, align well with the well-established theory of silicon p-n junction diodes. This provides a solid empirical verification of these fundamental semiconductor principles. While the study successfully demonstrates the expected characteristics of a 1N4007 diode, its contribution primarily lies in the re-verification of well-known principles. To enhance its impact for publication, several aspects could be considered. A quantitative comparison of the experimental I-V curves with theoretical models (e.g., the Shockley diode equation) would add depth, allowing for an analysis of discrepancies and potential error sources. Further, a more detailed discussion on the reverse breakdown voltage, beyond merely stating its existence, would be beneficial. Including actual graphical data and discussing the implications of these characteristics in common circuit applications could also enrich the paper's overall value.

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